发明授权
US07847209B2 Method of forming a metal oxide film and microwave power source device used for the above method
有权
形成金属氧化物膜的方法和用于上述方法的微波电源装置
- 专利标题: Method of forming a metal oxide film and microwave power source device used for the above method
- 专利标题(中): 形成金属氧化物膜的方法和用于上述方法的微波电源装置
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申请号: US10530357申请日: 2003-10-09
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公开(公告)号: US07847209B2公开(公告)日: 2010-12-07
- 发明人: Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada
- 申请人: Tsunehisa Namiki , Toshihide Ieki , Hideo Kurashima , Hajime Inagaki , Akira Kobayashi , Koji Yamada
- 申请人地址: JP Tokyo
- 专利权人: Toyo Seikan Kaisha, Ltd.
- 当前专利权人: Toyo Seikan Kaisha, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2002-295908 20021009; JP2003-112136 20030416; JP2003-116301 20030421
- 国际申请: PCT/JP03/12946 WO 20031009
- 国际公布: WO2004/033753 WO 20040422
- 主分类号: B23K9/00
- IPC分类号: B23K9/00 ; B23K9/02 ; B23B9/04
摘要:
A method of forming a metal oxide film by the plasma CVD method and which includes reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.
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