Invention Grant
- Patent Title: Thin film transistor substrate with divided gate electrode
- Patent Title (中): 具有分割栅电极的薄膜晶体管基板
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Application No.: US12411799Application Date: 2009-03-26
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Publication No.: US07847290B2Publication Date: 2010-12-07
- Inventor: Yasuyoshi Itoh , Yuichi Masutani , Masaru Aoki
- Applicant: Yasuyoshi Itoh , Yuichi Masutani , Masaru Aoki
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2008-083310 20080327
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 μm or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less.
Public/Granted literature
- US20090242886A1 THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2009-10-01
Information query
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