发明授权
- 专利标题： Non-volatile memory cell array and logic
- 专利标题（中）： 非易失性存储单元阵列和逻辑
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申请号： US12168448申请日： 2008-07-07
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公开(公告)号： US07847374B1公开(公告)日： 2010-12-07
- 发明人: Chih-Hsin Wang
- 申请人： Chih-Hsin Wang
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
A semiconductor device comprising a memory region including one or more transistor string arrays, a logic region including one or more logic transistors and an isolation region for isolating the logic transistors. The string array includes a plurality, T, of bipolar junction transistors. The string array includes a common collector region for the T bipolar junction transistors, a common base region for the T bipolar junction transistors, a plurality of emitters, one emitter for each of the T bipolar junction transistors, a number, B, of base contacts for the T bipolar junction transistors where the base contacts electrically couple the common base region and where the number of base contacts, B, is less than the number of transistors, T.
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