发明授权
- 专利标题： Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps
- 专利标题（中）： 用于形成结合高温处理步骤的半导体结构的方法，系统和结构
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申请号： US12437004申请日： 2009-05-07
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公开(公告)号： US07847401B2公开(公告)日： 2010-12-07
- 发明人: P R Chidambaram , Haowen Bu , Rajesh Khamankar , Douglas T Grider
- 申请人： P R Chidambaram , Haowen Bu , Rajesh Khamankar , Douglas T Grider
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step 118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).
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