发明授权
- 专利标题: Charge pumping circuit with decreased current consumption
- 专利标题(中): 充电泵电路具有降低的电流消耗
-
申请号: US12136429申请日: 2008-06-10
-
公开(公告)号: US07847620B2公开(公告)日: 2010-12-07
- 发明人: Jong Sam Kim , Jong Chern Lee
- 申请人: Jong Sam Kim , Jong Chern Lee
- 申请人地址: KR Kyoungki-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Kyoungki-do
- 代理机构: Ladas & Parry LLP
- 优先权: KR10-2008-0000290 20080102
- 主分类号: G05F1/10
- IPC分类号: G05F1/10 ; G05F3/02
摘要:
A charge pumping circuit consumes less current by reducing the number of charge pumps operating simultaneously. The charge pumping circuit includes a voltage sensor that detects a level of a high voltage and outputs a control signal based on the detection result. An oscillator provides an oscillating clock signal in response to the control signal of the voltage sensor, and the oscillator sequentially outputs the clock signal as a plurality of clock signals having shifted phases A plurality of high-voltage pumps are disposed in a plurality of regions to pump the high voltage in response to the clock signals and a different phase is designated for each region.
公开/授权文献
信息查询
IPC分类: