Invention Grant
- Patent Title: Structure for CMOS image sensor with a plurality of capacitors
- Patent Title (中): 具有多个电容器的CMOS图像传感器的结构
-
Application No.: US11044922Application Date: 2005-01-27
-
Publication No.: US07847847B2Publication Date: 2010-12-07
- Inventor: Dun-Nian Yaung , Kuo-Ching Huang , Ho-Ching Chien , Shou-Gwo Wuu
- Applicant: Dun-Nian Yaung , Kuo-Ching Huang , Ho-Ching Chien , Shou-Gwo Wuu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
A CMOS image sensor having increased capacitance that allows a photo-diode to generate a larger current is provided. The increased capacitance reduces noise and the dark signal. The image sensor utilizes a transistor having nitride spacers formed on a buffer oxide layer. Additional capacitance may be provided by various capacitor structures, such as a stacked capacitor, a planar capacitor, a trench capacitor, a MOS capacitor, a MIM/PIP capacitor, or the like. Embodiments of the present invention may be utilized in a 4-transistor pixel or a 3-transistor pixel configuration.
Public/Granted literature
- US20060164531A1 Structure for CMOS image sensor Public/Granted day:2006-07-27
Information query