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US07847847B2 Structure for CMOS image sensor with a plurality of capacitors 有权
具有多个电容器的CMOS图像传感器的结构

Structure for CMOS image sensor with a plurality of capacitors
Abstract:
A CMOS image sensor having increased capacitance that allows a photo-diode to generate a larger current is provided. The increased capacitance reduces noise and the dark signal. The image sensor utilizes a transistor having nitride spacers formed on a buffer oxide layer. Additional capacitance may be provided by various capacitor structures, such as a stacked capacitor, a planar capacitor, a trench capacitor, a MOS capacitor, a MIM/PIP capacitor, or the like. Embodiments of the present invention may be utilized in a 4-transistor pixel or a 3-transistor pixel configuration.
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