发明授权
US07848059B2 Magnetoresistive effect device and magnetic random access memory using the same
有权
磁阻效应器件和磁性随机存取存储器使用相同
- 专利标题： Magnetoresistive effect device and magnetic random access memory using the same
- 专利标题（中）： 磁阻效应器件和磁性随机存取存储器使用相同
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申请号： US11858386申请日： 2007-09-20
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公开(公告)号： US07848059B2公开(公告)日： 2010-12-07
- 发明人: Masatoshi Yoshikawa , Tadashi Kai , Toshihiko Nagase , Eiji Kitagawa , Tatsuya Kishi , Hiroaki Yoda
- 申请人： Masatoshi Yoshikawa , Tadashi Kai , Toshihiko Nagase , Eiji Kitagawa , Tatsuya Kishi , Hiroaki Yoda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-269517 20060929
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and contains at least one additive element of V, Cr, and Mn in a range of 0
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