发明授权
- 专利标题: Pseudo-bidimensional randomly accessible memory using monodimensional sequentially-accessiblle memory structure
- 专利标题(中): 使用一维顺序访问存储器结构的伪二维随机存取存储器
-
申请号: US10662225申请日: 2003-09-12
-
公开(公告)号: US07849255B2公开(公告)日: 2010-12-07
- 发明人: Bernard Plessier , Ming Kiat Yap
- 申请人: Bernard Plessier , Ming Kiat Yap
- 申请人地址: SG Singapore
- 专利权人: STMicroelectronics Asia Pacific Pte. Ltd.
- 当前专利权人: STMicroelectronics Asia Pacific Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理商 Lisa K. Jorgenson; Bryan A. Santarelli
- 优先权: EP02020689 20020912
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F13/00
摘要:
A memory comprises at least one array of memory elements, a partition of the at least one array into a plurality of sub-arrays of the memory elements, and an array configuration circuit for selectively putting the at least one array in one of two operating configurations. In a first operating configuration, the memory elements of the at least one array are coupled one to another to form a monodimensional sequentially-accessible memory, while in a second operating configuration the memory elements in each sub-array are coupled to one another so as to form an independent monodimensional sequentially-accessible memory block, a data content of any memory element of the sub-array being rotatable by shifts through the memory elements of the sub-array. A sub-array selector, responsive to a first memory address, selects one among the at least two sub-arrays according to the first memory address, and enables access to the selected sub-array. A memory element access circuit, responsive to a second memory address, enables access to a prescribed memory element in the selected sub-array after a prescribed number of shifts of the data content of the memory elements in the selected sub-array depending on the second memory address.
公开/授权文献
- US20040115879A1 Pseudo bidimensional randomly accessible memory 公开/授权日:2004-06-17