Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device

发明授权

US07851246B2 Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device 有权

标题翻译：具有光学传感器的半导体器件和在器件的前面和后面形成互连结构的方法

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专利标题： Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device
专利标题（中）： 具有光学传感器的半导体器件和在器件的前面和后面形成互连结构的方法
申请号： US11965160

申请日： 2007-12-27
公开(公告)号： US07851246B2

公开(公告)日： 2010-12-14
发明人: Zigmund R. Camacho , Lionel Chien Hui Tay , Henry D. Bathan , Arnel Senosa Trasporto
申请人： Zigmund R. Camacho , Lionel Chien Hui Tay , Henry D. Bathan , Arnel Senosa Trasporto
申请人地址： SG Singapore
专利权人： STATS ChipPAC, Ltd.
当前专利权人： STATS ChipPAC, Ltd.
当前专利权人地址： SG Singapore
代理商 Robert D. Atkins
主分类号： H01L29/72
IPC分类号： H01L29/72

Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device

摘要：

A semiconductor package has a semiconductor die with an optically active region which converts light to an electrical signal. An expansion region is formed around the semiconductor die. A through hole via (THV) is formed in the expansion region. Conductive material is deposited in the THV. A passivation layer is formed over the semiconductor die. The passivation layer allows for passage of light to the optically active region of the semiconductor die. A glass layer is applied to the passivation layer. A first RDL is electrically connected between the THV and a contact pad of the semiconductor die. Additional RDLs are formed on a front and back side of the semiconductor die. An under bump metallization (UBM) layer is formed over and electrically connected to the intermediate conduction layer. Solder material is deposited on the UBM and reflowed to form a solder bump.

摘要（中）：

半导体封装具有将光转换成电信号的具有光学有效区域的半导体管芯。在半导体管芯周围形成扩展区域。在膨胀区域形成通孔通孔（THV）。导电材料沉积在THV中。在半导体管芯上形成钝化层。钝化层允许光通过半导体管芯的光学活性区域。玻璃层被施加到钝化层。第一RDL电连接在THV和半导体管芯的接触焊盘之间。另外的RDL形成在半导体管芯的前侧和后侧。在中间导电层之上形成并电连接凹凸金属化（UBM）层。焊料沉积在UBM上并回流以形成焊料凸点。

公开/授权文献

US20090166785A1 Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device 公开/授权日：2009-07-02

信息查询

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的