发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12000599申请日： 2007-12-14
-
公开(公告)号： US07851278B2公开(公告)日： 2010-12-14
- 发明人: Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
- 申请人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2003-347676 20031006
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
公开/授权文献
信息查询
IPC分类:
