发明授权
- 专利标题: Manufacturing method of flexible semiconductor device and flexible semiconductor device
- 专利标题(中): 柔性半导体器件和柔性半导体器件的制造方法
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申请号: US12518602申请日: 2008-10-01
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公开(公告)号: US07851281B2公开(公告)日: 2010-12-14
- 发明人: Koichi Hirano , Seiichi Nakatani , Shingo Komatsu , Yoshihisa Yamashita , Takashi Ichiryu
- 申请人: Koichi Hirano , Seiichi Nakatani , Shingo Komatsu , Yoshihisa Yamashita , Takashi Ichiryu
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2007-306755 20071128
- 国际申请: PCT/JP2008/002759 WO 20081001
- 国际公布: WO2009/069248 WO 20090406
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23 is partially etched to form source/drain electrodes 20s, 20d in a region corresponding to the gate electrode 20g. A semiconductor layer 40 is then formed in contact with the source/drain electrodes 20s, 20d and on the gate electrode 20g with the inorganic insulating layer 35 interposed therebetween. The inorganic insulating layer 35 on the gate electrode 20g functions as a gate insulating film 30, and the semiconductor layer 40 between the source/drain electrodes 20s, 20d on the inorganic insulating layer 35 functions as a channel.