发明授权
US07851889B2 MOSFET device including a source with alternating P-type and N-type regions
有权
MOSFET器件包括具有交替P型和N型区的源
- 专利标题： MOSFET device including a source with alternating P-type and N-type regions
- 专利标题（中）： MOSFET器件包括具有交替P型和N型区的源
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申请号： US11742363申请日： 2007-04-30
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公开(公告)号： US07851889B2公开(公告)日： 2010-12-14
- 发明人: Ronghua Zhu , Amitava Bose , Vishnu K. Khemka , Todd C. Roggenbauer
- 申请人： Ronghua Zhu , Amitava Bose , Vishnu K. Khemka , Todd C. Roggenbauer
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Ingrassia, Fisher & Lorenz, P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Apparatus and methods are provided for fabricating semiconductor devices with reduced bipolar effects. One apparatus includes a semiconductor body (120) including a surface and a transistor source (300) located in the semiconductor body proximate the surface, and the transistor source includes an area (310) of alternating conductivity regions (3110, 3120). Another apparatus includes a semiconductor body (120) including a first conductivity and a transistor source (500) located in the semiconductor body. The transistor source includes multiple regions (5120) including a second conductivity, wherein the regions and the semiconductor body form an area (510) of alternating regions of the first and second conductivities. One method includes implanting a semiconductor well (120) including a first conductivity in a substrate (110) and implanting a plurality of doped regions (5120) comprising a second conductivity in the semiconductor well. An area (510) comprising regions of alternating conductivities is then formed in the semiconductor well.