发明授权
- 专利标题： Wiring structure and method of manufacturing the same
- 专利标题（中）： 接线结构及其制造方法
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申请号： US12147122申请日： 2008-06-26
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公开(公告)号： US07851917B2公开(公告)日： 2010-12-14
- 发明人: Tomio Yamashita , Mitsuaki Morigami
- 申请人： Tomio Yamashita , Mitsuaki Morigami
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Ditthavong, Mori & Steiner, P.C.
- 优先权： JP2007-168588 20070627
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/48 ; H01L29/40
摘要：
A wiring structure includes a first wiring, a first interlayer dielectric film having a first opening, a second wiring formed with a first recess portion on a region corresponding to the first opening, a second interlayer dielectric film having a second opening and a third wiring so formed as to cover the second interlayer dielectric film, wherein an inner side surface of the second opening is arranged on a region corresponding to the first recess portion and formed such that an opening width of a portion in the vicinity of an upper end increases from a lower portion toward an upper portion.
公开/授权文献
- US20090001590A1 WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME 公开/授权日：2009-01-01
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