发明授权
- 专利标题: Polishing compound, method for production thereof, and polishing method
- 专利标题(中): 抛光剂,其制造方法和研磨方法
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申请号: US10831618申请日: 2004-04-26
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公开(公告)号: US07854777B2公开(公告)日: 2010-12-21
- 发明人: Satoshi Takemiya , Norihito Nakazawa , Yoshinori Kon
- 申请人: Satoshi Takemiya , Norihito Nakazawa , Yoshinori Kon
- 申请人地址: JP Tokyo JP Chigasaki-shi
- 专利权人: Asahi Glass Company, Limited,Seimi Chemical Co., Ltd.
- 当前专利权人: Asahi Glass Company, Limited,Seimi Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Chigasaki-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2001-329148 20011026; JP2001-353207 20011119
- 主分类号: B24D3/02
- IPC分类号: B24D3/02 ; C09C1/68 ; C09K3/14 ; C09G1/02 ; H01L21/302 ; H01L21/461
摘要:
A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, γ-butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating film 2 on which a wiring metal film 4 and a barrier film 3 are formed, the formation of an embedded wiring 5 is made possible with low dishing, low erosion and low scratching at a high removal rate.
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