发明授权
- 专利标题: Symmetical double contact electro-winning
- 专利标题(中): 对称双接触电击
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申请号: US11998719申请日: 2007-12-01
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公开(公告)号: US07854825B2公开(公告)日: 2010-12-21
- 发明人: William Ebert
- 申请人: William Ebert
- 代理商 Mark Ogram
- 主分类号: C25B9/04
- IPC分类号: C25B9/04
摘要:
A symmetrical double-double contact mechanism for an electro-deposition mechanism. Using a base insulator, a cap block insulator is formed to support four series of electrodes of two different types (anode and cathode). Because of the contact mechanism employed, redundant contacts are provided so that should a short occur, alternative electrical pathways are available to maintain operation of the affected cathode or anode.
公开/授权文献
- US20090139857A1 Symmetrical double contact electro-winning 公开/授权日:2009-06-04
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