发明授权
US07855098B2 Method of forming, modifying, or repairing a semiconductor device using field-controlled diffusion
有权
使用现场控制扩散形成，修改或修复半导体器件的方法
- 专利标题： Method of forming, modifying, or repairing a semiconductor device using field-controlled diffusion
- 专利标题（中）： 使用现场控制扩散形成，修改或修复半导体器件的方法
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申请号： US12777062申请日： 2010-05-10
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公开(公告)号： US07855098B2公开(公告)日： 2010-12-21
- 发明人: Peter Kiesel , Oliver Schmidt
- 申请人： Peter Kiesel , Oliver Schmidt
- 申请人地址： US CA Palo Alto
- 专利权人： Palo Alto Research Center Incorporated
- 当前专利权人： Palo Alto Research Center Incorporated
- 当前专利权人地址： US CA Palo Alto
- 代理商 Jonathan A. Small
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/16 ; H01L21/331 ; H01L21/326
摘要：
A technique for altering or repairing the operating state of a semiconductor device comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in the presence of an electric field (e.g., bias to ground of +/−50 V) the dopant atoms are caused to collect to form an ohmic contact, leaving a depletion region. Metal-semiconductor junction devices such as diodes, photo-diodes, photo-detectors, MESFETs, etc. may thereby be fabricated, repaired or modified.
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