发明授权
- 专利标题： SiC crystal and semiconductor device
- 专利标题（中）： SiC晶体和半导体器件
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申请号： US12152016申请日： 2008-05-12
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公开(公告)号： US07855385B2公开(公告)日： 2010-12-21
- 发明人: Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
- 申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
- 申请人地址： JP Nagoya-shi, Aichi JP Kyoto-shi, Kyoto
- 专利权人： Meijo University,National University Corporation Kyoto Institute of Technology
- 当前专利权人： Meijo University,National University Corporation Kyoto Institute of Technology
- 当前专利权人地址： JP Nagoya-shi, Aichi JP Kyoto-shi, Kyoto
- 代理机构： Yokoi & Co., U.S.A. Inc.
- 代理商 Toshiyuki Yokoi
- 优先权： JP2005-330579 20051115
- 主分类号： H01L31/0312
- IPC分类号： H01L31/0312
摘要：
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
公开/授权文献
- US20080277670A1 SiC crystal and semiconductor device 公开/授权日：2008-11-13
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