发明授权
- 专利标题： Solid-state imaging device and method of manufacturing the same
- 专利标题（中）： 固态成像装置及其制造方法
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申请号： US11776791申请日： 2007-07-12
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公开(公告)号： US07855406B2公开(公告)日： 2010-12-21
- 发明人: Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
- 申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-193131 20060713
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
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