发明授权
- 专利标题: Stacked multilayer structure and manufacturing method thereof
- 专利标题(中): 堆叠多层结构及其制造方法
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申请号: US12163145申请日: 2008-06-27
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公开(公告)号: US07855457B2公开(公告)日: 2010-12-21
- 发明人: Makoto Mizukami , Takeshi Kamigaichi
- 申请人: Makoto Mizukami , Takeshi Kamigaichi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-173445 20070629
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.
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