发明授权
- 专利标题: VCO capacitor bank trimming and calibration
- 专利标题(中): VCO电容器组修整和校准
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申请号: US12116527申请日: 2008-05-07
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公开(公告)号: US07855610B2公开(公告)日: 2010-12-21
- 发明人: Mazhareddin Taghivand , Jeongsik Yang , Sang-Oh Lee
- 申请人: Mazhareddin Taghivand , Jeongsik Yang , Sang-Oh Lee
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Jiayu Xu
- 主分类号: H03B5/08
- IPC分类号: H03B5/08
摘要:
Techniques are disclosed for trimming a capacitance associated with a capacitor bank for use in a voltage-controlled oscillator (VCO). In an embodiment, each capacitance is sub-divided into a plurality of constituent capacitances. The constituent capacitances may be selectively enabled or disabled to trim the step sizes of the capacitor bank. Further techniques are disclosed for calibrating the trimmable capacitance to minimize step size error for the capacitor bank.
公开/授权文献
- US20090278620A1 VCO CAPACITOR BANK TRIMMING AND CALIBRATION 公开/授权日:2009-11-12
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