发明授权
- 专利标题： Semiconductor having enhanced carbon doping
- 专利标题（中）： 具有增强碳掺杂的半导体
-
申请号： US11670759申请日： 2007-02-02
-
公开(公告)号： US07856041B2公开(公告)日： 2010-12-21
- 发明人: Ralph H. Johnson
- 申请人： Ralph H. Johnson
- 申请人地址： US CA Sunnyvale
- 专利权人： Finisar Corporation
- 当前专利权人： Finisar Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Workman Nydegger
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
公开/授权文献
- US20070127536A1 SEMICONDUCTOR HAVING ENHANCED CARBON DOPING 公开/授权日：2007-06-07