发明授权
- 专利标题： AlInGaN light-emitting device
- 专利标题（中）： AlInGaN发光器件
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申请号： US12354317申请日： 2009-01-15
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公开(公告)号： US07858962B2公开(公告)日： 2010-12-28
- 发明人: Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
- 申请人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： GB0800742.9 20080116
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
公开/授权文献
- US20090179191A1 AlInGaN LIGHT-EMITTING DEVICE 公开/授权日：2009-07-16
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