发明授权
US07858979B2 Method of aligning deposited nanotubes onto an etched feature using a spacer
有权
使用间隔物将沉积的纳米管对准蚀刻特征的方法
- 专利标题: Method of aligning deposited nanotubes onto an etched feature using a spacer
- 专利标题(中): 使用间隔物将沉积的纳米管对准蚀刻特征的方法
-
申请号: US12475013申请日: 2009-05-29
-
公开(公告)号: US07858979B2公开(公告)日: 2010-12-28
- 发明人: Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
- 申请人: Colin D. Yates , Christopher L. Neville , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
- 申请人地址: US MA Woburn
- 专利权人: Nantero, Inc.
- 当前专利权人: Nantero, Inc.
- 当前专利权人地址: US MA Woburn
- 代理机构: Wilmer Cutler Pickering Hale and Dorr LLP
- 主分类号: H01L29/08
- IPC分类号: H01L29/08 ; H01L35/24 ; H01L51/00
摘要:
A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
公开/授权文献
信息查询
IPC分类: