Invention Grant
- Patent Title: Manufacturing methods for semiconductor device with sealed cap
- Patent Title (中): 具有密封帽的半导体器件的制造方法
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Application No.: US12068771Application Date: 2008-02-12
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Publication No.: US07859091B2Publication Date: 2010-12-28
- Inventor: Tetsuo Fujii , Kazuhiko Sugiura
- Applicant: Tetsuo Fujii , Kazuhiko Sugiura
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2007-042619 20070222; JP2007-257840 20071001
- Main IPC: H01L23/06
- IPC: H01L23/06

Abstract:
A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
Public/Granted literature
- US20080290490A1 Semiconductor device and method for manufacturing the same Public/Granted day:2008-11-27
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