发明授权
- 专利标题： Semiconductor package for improving characteristics for transmitting signals and power
- 专利标题（中）： 用于提高发射信号和功率特性的半导体封装
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申请号： US12346963申请日： 2008-12-31
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公开(公告)号： US07859115B2公开(公告)日： 2010-12-28
- 发明人: Jong Hoon Kim , Min Suk Suh , Seung Taek Yang
- 申请人： Jong Hoon Kim , Min Suk Suh , Seung Taek Yang
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2008-0110456 20081107
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor package includes a semiconductor chip having a first region and a second region. Bonding pads are formed and through-holes are defined in the first and second regions. Insulation layers are formed on sidewalls of the through-holes, and through-electrodes formed in the through-holes and connected with corresponding bonding pads. The insulation layers formed in the first and second regions have different thicknesses or dielectric constants.
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