发明授权
- 专利标题: Energy adjusted write pulses in phase-change memory cells
- 专利标题(中): 相变存储单元中的能量调节写入脉冲
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申请号: US11972415申请日: 2008-01-10
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公开(公告)号: US07859894B2公开(公告)日: 2010-12-28
- 发明人: Thomas Happ , Zaidi Shoaib
- 申请人: Thomas Happ , Zaidi Shoaib
- 申请人地址: DE Munich
- 专利权人: Qimonda AG
- 当前专利权人: Qimonda AG
- 当前专利权人地址: DE Munich
- 代理机构: Dicke, Billig & Czaja, PLLC
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
An integrated circuit that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least a first and a second state. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for at least some of the phase-change memory cells in accordance with the temperature sensed by the temperature sensor.