发明授权
- 专利标题: Manufacturing method of tantalum condenser
- 专利标题(中): 钽冷凝器的制造方法
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申请号: US12007415申请日: 2008-01-10
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公开(公告)号: US07862852B2公开(公告)日: 2011-01-04
- 发明人: Gi Ahn Lee
- 申请人: Gi Ahn Lee
- 申请人地址: KR Gyunggi-do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Gyunggi-do
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2007-0026572 20070319
- 主分类号: C25D11/02
- IPC分类号: C25D11/02 ; C25D11/04 ; C25D11/06
摘要:
There is provided a method of manufacturing a tantalum condenser, in which a high-performing tantalum condenser is manufactured through a more simplified and higher-efficient process using simpler and economical equipment. The method of manufacturing a tantalum condenser including: preparing a tantalum pellet by sintering a tantalum powder; oxidizing the tantalum pellet to form a dielectric layer on a surface thereof; forming a polymer layer on the tantalum pellet having the dielectric layer formed on the surface thereof; and immersing the tantalum pellet having the polymer layer formed on the surface thereof in a polymer suspension to be subjected to chemical reformation.
公开/授权文献
- US20080233275A1 Manufacturing method of tantalum condenser 公开/授权日:2008-09-25
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