发明授权
US07862975B2 Carrier core material for an electrophotographic developer, carrier, and electrophotographic developer using the carrier
有权
用于电子照相显影剂,载体和使用载体的电子照相显影剂的载体芯材料
- 专利标题: Carrier core material for an electrophotographic developer, carrier, and electrophotographic developer using the carrier
- 专利标题(中): 用于电子照相显影剂,载体和使用载体的电子照相显影剂的载体芯材料
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申请号: US12399164申请日: 2009-03-06
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公开(公告)号: US07862975B2公开(公告)日: 2011-01-04
- 发明人: Yasunori Tabira , Koji Aga , Tomoyuki Suwa
- 申请人: Yasunori Tabira , Koji Aga , Tomoyuki Suwa
- 申请人地址: JP Tokyo JP Chiba
- 专利权人: Mitsui Mining & Smelting Co., Ltd.,Powdertech Co., Ltd.
- 当前专利权人: Mitsui Mining & Smelting Co., Ltd.,Powdertech Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Chiba
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2008-090651 20080331
- 主分类号: G03G9/113
- IPC分类号: G03G9/113 ; G03G9/107
摘要:
A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109 Ω, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010 Ω.
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