发明授权
- 专利标题： Method for manufacturing a GaN based optical device
- 专利标题（中）： GaN基光学器件的制造方法
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申请号： US10542485申请日： 2004-08-21
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公开(公告)号： US07863178B2公开(公告)日： 2011-01-04
- 发明人: Tae-Kyung Yoo , Joong Seo Park , Eun Hyun Park
- 申请人： Tae-Kyung Yoo , Joong Seo Park , Eun Hyun Park
- 申请人地址： KR Koomi KR Gyunggi-do
- 专利权人： Epivalley Co., Ltd.,Samsung LED Co., Ltd.
- 当前专利权人： Epivalley Co., Ltd.,Samsung LED Co., Ltd.
- 当前专利权人地址： KR Koomi KR Gyunggi-do
- 代理机构： Husch Blackwell LLP
- 优先权： KR10-2003-0061551 20030903; KR10-2004-0021399 20040330
- 国际申请： PCT/KR2004/002113 WO 20040821
- 国际公布： WO2005/022655 WO 20050310
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.