发明授权
- 专利标题： Semiconductor component and method for producing it
- 专利标题（中）： 半导体元件及其制造方法
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申请号： US12167437申请日： 2008-07-03
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公开(公告)号： US07863680B2公开(公告)日： 2011-01-04
- 发明人: Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
- 申请人： Markus Zundel , Rudolf Zelsacher , Franz Hirler , Dietmar Kotz , Hermann Peri , Armin Willmeroth
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Dicke, Billig & Czaja, PLLC
- 优先权： DE10341793 20030910
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
公开/授权文献
- US20080265318A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT 公开/授权日：2008-10-30
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