发明授权
US07864556B2 Magnetic domain information storage device and method of manufacturing the same 有权
磁畴信息存储装置及其制造方法

Magnetic domain information storage device and method of manufacturing the same
摘要:
Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.
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