发明授权
- 专利标题: Magnetic domain information storage device and method of manufacturing the same
- 专利标题(中): 磁畴信息存储装置及其制造方法
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申请号: US11987925申请日: 2007-12-06
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公开(公告)号: US07864556B2公开(公告)日: 2011-01-04
- 发明人: Chee-kheng Lim , Sung-hoon Choa
- 申请人: Chee-kheng Lim , Sung-hoon Choa
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0123368 20061206
- 主分类号: G11C19/00
- IPC分类号: G11C19/00
摘要:
Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.