发明授权
US07864578B2 Semiconductor memory repairing a defective bit and semiconductor memory system
有权
半导体存储器修复有缺陷的位和半导体存储器系统
- 专利标题: Semiconductor memory repairing a defective bit and semiconductor memory system
- 专利标题(中): 半导体存储器修复有缺陷的位和半导体存储器系统
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申请号: US12164782申请日: 2008-06-30
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公开(公告)号: US07864578B2公开(公告)日: 2011-01-04
- 发明人: Tomoji Takada
- 申请人: Tomoji Takada
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C7/00 ; G11C29/00
摘要:
A semiconductor memory has a plurality of blocks, and each of the blocks comprises a plurality of pages, and further, each of the pages has a plurality of memory cells. A block having defective bits less than N (N is an integer number more than 0) in all pages of the block stores a first data showing a normal block. A block including at least one page having defective bits more than N and including no page having defective bits more than M (M is an integer number of M>N) stores a second data showing a psedo-pass block as a pseudo-normal block. A block including at least one page having defective bits more than M stores a third data showing a defective block.
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