发明授权
US07864625B2 Optimizing SRAM performance over extended voltage or process range using self-timed calibration of local clock generator
有权
使用本地时钟发生器的自定时校准优化扩展电压或过程范围内的SRAM性能
- 专利标题: Optimizing SRAM performance over extended voltage or process range using self-timed calibration of local clock generator
- 专利标题(中): 使用本地时钟发生器的自定时校准优化扩展电压或过程范围内的SRAM性能
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申请号: US12244286申请日: 2008-10-02
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公开(公告)号: US07864625B2公开(公告)日: 2011-01-04
- 发明人: Gary D. Carpenter , Jente B. Kuang , Kevin J. Nowka , Liang-Teck Pang
- 申请人: Gary D. Carpenter , Jente B. Kuang , Kevin J. Nowka , Liang-Teck Pang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Libby Z. Handelsman; Jack V. Musgrove
- 主分类号: G11C8/18
- IPC分类号: G11C8/18 ; G11C8/00 ; G11C7/00
摘要:
A delay circuit has a fixed delay path at a lower voltage level, a level converter, and an adjustable delay path at a higher voltage level. The fixed delay path includes an inverter chain, and the adjustable delay path includes serially-connected delay elements selectively connected to the circuit output. In an application for a local clock buffer of a static, random-access memory (SRAM), the lower voltage level is that of the local clock buffer, and the higher voltage level is that of the SRAM. These voltages may vary in response to dynamic voltage scaling, requiring re-calibration of the adjustable delay path. The adjustable delay path may be calibrated by progressively increasing the read access time of the SRAM array until a contemporaneous read operation returns the correct output, or by using a replica SRAM path to simulate variations in delay with changes in voltage supply.
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