发明授权
- 专利标题: Liquid crystal display and fabrication method thereof
- 专利标题(中): 液晶显示及其制造方法
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申请号: US11968065申请日: 2007-12-31
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公开(公告)号: US07867796B2公开(公告)日: 2011-01-11
- 发明人: Seung-Hee Nam , Nam-Kook Kim , Soon-Sung Yoo , Youn-Gyoung Chang
- 申请人: Seung-Hee Nam , Nam-Kook Kim , Soon-Sung Yoo , Youn-Gyoung Chang
- 申请人地址: KR Seoul
- 专利权人: LG Display Co., Ltd.
- 当前专利权人: LG Display Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: KR10-2007-0024185 20070312
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/84 ; H01L21/44
摘要:
A method for fabricating an LCD includes: providing a substrate with a thin film transistor (ITT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
公开/授权文献
- US20080224141A1 LIQUID CRYSTAL DISPLAY AND FABRICATION METHOD THEREOF 公开/授权日:2008-09-18
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