发明授权
- 专利标题: Method for manufacturing photoelectric converting device
- 专利标题(中): 光电转换装置的制造方法
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申请号: US12161890申请日: 2007-02-28
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公开(公告)号: US07867807B2公开(公告)日: 2011-01-11
- 发明人: Hitoshi Kishita , Hiroyuki Sugiyama , Hiroyuki Kyushima , Hideki Shimoi , Keisuke Inoue
- 申请人: Hitoshi Kishita , Hiroyuki Sugiyama , Hiroyuki Kyushima , Hideki Shimoi , Keisuke Inoue
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JPP2006-091476 20060329
- 国际申请: PCT/JP2007/053805 WO 20070228
- 国际公布: WO2007/111072 WO 20071004
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
公开/授权文献
- US20090305450A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTING DEVICE 公开/授权日:2009-12-10
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