发明授权
- 专利标题: Methods for forming co-planar wafer-scale chip packages
- 专利标题(中): 用于形成共面晶片级芯片封装的方法
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申请号: US12121468申请日: 2008-05-15
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公开(公告)号: US07867820B2公开(公告)日: 2011-01-11
- 发明人: Lloyd G. Burrell , Howard Hao Chen , Louis L. Hsu , Wolfgang Sauter
- 申请人: Lloyd G. Burrell , Howard Hao Chen , Louis L. Hsu , Wolfgang Sauter
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carrier substrate, and global interconnects among the chips are formed on the top planar surface of the finished chips. The proposed methods facilitate the integration of chips fabricated with different process steps and materials. There is no need to use a planarization process such as chemical-mechanical polish to planarize the top surfaces of the chips. Since the chips are precisely aligned to each other and all the chips are mounted facing up, the module is ready for global wiring, which eliminates the need to flip the chips from an upside-down position.
公开/授权文献
- US20080280399A1 Methods for Forming Co-Planar Wafer-Scale Chip Packages 公开/授权日:2008-11-13
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