发明授权
- 专利标题： Reduction of etch-rate drift in HDP processes
- 专利标题（中）： 降低HDP工艺中的蚀刻速率漂移
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申请号： US12204503申请日： 2008-09-04
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公开(公告)号： US07867921B2公开(公告)日： 2011-01-11
- 发明人: Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
- 申请人： Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
公开/授权文献
- US20090075489A1 REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESSES 公开/授权日：2009-03-19
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