发明授权
- 专利标题: Microvaristor-based overvoltage protection
- 专利标题(中): 基于微电阻的过电压保护
-
申请号: US12255831申请日: 2008-10-22
-
公开(公告)号: US07868732B2公开(公告)日: 2011-01-11
- 发明人: Markus Hoidis , Felix Greuter , Lise Donzel , Reto Kessler
- 申请人: Markus Hoidis , Felix Greuter , Lise Donzel , Reto Kessler
- 申请人地址: CH Zurich
- 专利权人: ABB Research Ltd
- 当前专利权人: ABB Research Ltd
- 当前专利权人地址: CH Zurich
- 代理机构: Buchanan Ingersoll & Rooney PC
- 主分类号: H01C7/10
- IPC分类号: H01C7/10
摘要:
The disclosure relates to an overvoltage protection means containing ZnO microvaristor particles for protecting electrical elements and a method to produce the means. Single microvaristor particles are placed in an arrangement having a monolayer thickness and are electrically coupled to the electrical element to protect it against overvoltages. Embodiments, among other things, relate to: 1-dimensional or 2-dimensional arrangements of microvaristor particles; placement of single microvaristors on a carrier; the carrier being planar or string-like, being structured, being a sticky tape, having fixation means for fixing the microvaristors, or having electrical coupling means. The monolayered overvoltage protection means allows very tight integration and high flexibility in shaping and adapting it to the electric or electronic element. Furthermore, reduced capacitance and hence reaction times of overvoltage protection are achieved.
公开/授权文献
- US20090045907A1 Microvaristor-Based Overvoltage Protection 公开/授权日:2009-02-19
信息查询