发明授权
- 专利标题: Set algorithm for phase change memory cell
- 专利标题(中): 相变存储单元的集合算法
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申请号: US12345384申请日: 2008-12-29
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公开(公告)号: US07869270B2公开(公告)日: 2011-01-11
- 发明人: Ming-Hsiu Lee
- 申请人: Ming-Hsiu Lee
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes Beffel & Wolfeld LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Memory devices and methods for operating such devices are described herein. A method is described herein for operating a memory cell comprising phase change material and programmable to a plurality of resistance states including a high resistance state and a lower resistance state. The method comprises applying a first bias arrangement to the memory cell to establish the lower resistance state, the first bias arrangement comprising a first voltage pulse. The method further comprises determining whether the memory cell is in the lower resistance state, and if the memory cell is not in the lower resistance state then applying a second bias arrangement to the memory cell. The second bias arrangement comprises a second voltage pulse having a pulse height greater than that of the first voltage pulse.
公开/授权文献
- US20100165711A1 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL 公开/授权日:2010-07-01