In order to obtain a high purity sputtered film for a capacitor electrode of a semiconductor memory and to make the sputtered film have uniform thickness and good adhesiveness with Si substrate, a high-purity Ru alloy target is provided, wherein a total content of the platinum group elements excluding Ru is in a range of 15 to 200 wtppm and remnants are Ru and inevitable impurities. Also, provided is a manufacturing method of the high-purity Ru alloy target, comprising the steps of mixing Ru powder having a purity of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding of the mixed powder to obtain a compact, performing electron beam melting of the compact to obtain an ingot, and forging the ingot at 1400 to 1900° C.