发明授权
- 专利标题: Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
- 专利标题(中): 半导体装置及其制造方法,电路板和电子仪器
-
申请号: US12314146申请日: 2008-12-04
-
公开(公告)号: US07871858B2公开(公告)日: 2011-01-18
- 发明人: Nobuaki Hashimoto
- 申请人: Nobuaki Hashimoto
- 申请人地址: JP Tokyo
- 专利权人: Seiko Epson Corporation
- 当前专利权人: Seiko Epson Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP10-100580 19980327; JP11-041119 19990219
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of manufacturing a semiconductor device forms a penetrating hole in a substrate so that the penetrating hole extends from a first surface of the substrate to a second surface of the substrate being opposite to the first surface. An internal wall surface of the penetrating hole has a protrusion formed of a material constituting the substrate, the first surface of the substrate being closer to the protrusion than the second surface. A conductive member is formed on the first surface so that the conductive member covers the penetrating hole. A semiconductor chip is mounted on the first surface so that an electrode of the semiconductor chip is electrically connected to the conductive member. An external electrode is provided through the penetrating hole so that the external electrode is electrically connected to the conductive member and the external electrode projects from the second surface of the substrate.
公开/授权文献
信息查询
IPC分类: