发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12257175申请日: 2008-10-23
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公开(公告)号: US07871888B2公开(公告)日: 2011-01-18
- 发明人: Takeyoshi Nishimura
- 申请人: Takeyoshi Nishimura
- 申请人地址: JP
- 专利权人: Fuji Electric Systems Co., Ltd.
- 当前专利权人: Fuji Electric Systems Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Rossi, Kimms & McDowell LLP
- 优先权: JP2007-276456 20071024
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A p− RESURF region is formed as a surface layer in an n− semiconductor layer. Then, trenches, gate insulating films, and a thick insulating film, gate electrodes, and a gate polysilicon interconnection are formed in this order. Subsequently, a p-well region is formed using the gate polysilicon interconnection as a mask. Then n+ source regions are formed. Since the p− RESURF region is formed and the p-well region is formed after forming the gate electrodes and the gate polysilicon interconnection, the severeness of a high-temperature heat history is lowered and the diffusion depth of the p-well region is decreased. The formation of the p− RESURF region and the shallow p-well region makes it possible to reduce the on-resistance while increasing the breakdown voltage, as well as reducing the gate capacitance.
公开/授权文献
- US20090111230A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2009-04-30
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