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US07871912B2 Methods of making semiconductor-based electronic devices by forming freestanding semiconductor structures
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通过形成独立的半导体结构制造基于半导体的电子器件的方法
- 专利标题： Methods of making semiconductor-based electronic devices by forming freestanding semiconductor structures
- 专利标题（中）： 通过形成独立的半导体结构制造基于半导体的电子器件的方法
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申请号： US11610195申请日： 2006-12-13
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公开(公告)号： US07871912B2公开(公告)日： 2011-01-18
- 发明人: Ajaykumar R. Jain
- 申请人： Ajaykumar R. Jain
- 申请人地址： US VT Shelbourne
- 专利权人： Versatilis LLC
- 当前专利权人： Versatilis LLC
- 当前专利权人地址： US VT Shelbourne
- 代理机构： Downs Rachlin Martin PLLC
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Various methods for forming active electronic devices, such as field-effect transistors, and devices made using these methods are disclosed. Some of the methods include growing freestanding nano-, micro- and milli-scale semiconducting structures that are used for the active semiconducting channels of the active electronic devices. Others of the methods include forming strands of active electronic devices along a wire. Yet others of the methods utilize both of these concepts so that the active electronic devices on a particular strand include freestanding semiconducting structures.
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