Invention Grant
- Patent Title: Methods for manufacturing high dielectric constant film
- Patent Title (中): 制造高介电常数膜的方法
-
Application No.: US12057113Application Date: 2008-03-27
-
Publication No.: US07871942B2Publication Date: 2011-01-18
- Inventor: Shreyas S. Kher , Pravin K. Narwankar , Khaled Z. Ahmed , Yi Ma
- Applicant: Shreyas S. Kher , Pravin K. Narwankar , Khaled Z. Ahmed , Yi Ma
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Diehl Servilla, LLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
Public/Granted literature
- US20090246972A1 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM Public/Granted day:2009-10-01
Information query
IPC分类:
