发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12166635申请日： 2008-07-02
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公开(公告)号： US07872296B2公开(公告)日： 2011-01-18
- 发明人: Takayuki Okamura
- 申请人： Takayuki Okamura
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-177598 20070705
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor memory device includes a semiconductor substrate having a projection, an upper end portion of the projection being curved, a first element isolation insulating film formed on the substrate surface at the root of the projection, having an upper surface lower than an upper surface of the projection, a second element isolation insulating film formed in the projection, a gate insulating film formed on the projection, and including a charge storage layer, and a gate electrode formed on the gate insulating film. A height of a first portion where the gate electrode is in contact with the gate insulating film above the upper surface of the first element isolation insulating film is smaller than that of a second portion where the gate electrode is in contact with the gate insulating film above an upper end of the second element isolation insulating film.
公开/授权文献
- US20090008704A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2009-01-08
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