发明授权
US07872305B2 Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
有权
屏蔽栅沟槽FET，其中具有氮化物层的电极间电介质
- 专利标题： Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
- 专利标题（中）： 屏蔽栅沟槽FET，其中具有氮化物层的电极间电介质
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申请号： US12146791申请日： 2008-06-26
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公开(公告)号： US07872305B2公开(公告)日： 2011-01-18
- 发明人: Scott L. Hunt
- 申请人： Scott L. Hunt
- 申请人地址： US ME South Portland
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US ME South Portland
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A shielded gate field effect transistor (FET) comprises a plurality of trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench, and a gate electrode is disposed over the shield electrode in each trench. An inter-electrode dielectric (IED) extends between the shield electrode and the gate electrode. The IED comprises a first oxide layer and a nitride layer over the first oxide layer.
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