发明授权
- 专利标题: Semiconductor device comprising a high dielectric constant insulating film including nitrogen
- 专利标题(中): 包括包含氮的高介电常数绝缘膜的半导体器件
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申请号: US12172680申请日: 2008-07-14
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公开(公告)号: US07872312B2公开(公告)日: 2011-01-18
- 发明人: Hisashi Ogawa
- 申请人: Hisashi Ogawa
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2007-209343 20070810
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A semiconductor device includes a first gate electrode formed in a first region on a semiconductor substrate with a first gate insulating film sandwiched therebetween; and a second gate electrode formed in a second region on the semiconductor substrate with a second gate insulating film sandwiched therebetween. The first gate insulating film includes a first high dielectric constant insulating film with a first nitrogen concentration and the second gate insulating film includes a second high dielectric constant insulating film with a second nitrogen concentration higher than the first nitrogen concentration.
公开/授权文献
- US20090039437A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日:2009-02-12
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