发明授权
US07872312B2 Semiconductor device comprising a high dielectric constant insulating film including nitrogen 有权
包括包含氮的高介电常数绝缘膜的半导体器件

  • 专利标题: Semiconductor device comprising a high dielectric constant insulating film including nitrogen
  • 专利标题(中): 包括包含氮的高介电常数绝缘膜的半导体器件
  • 申请号: US12172680
    申请日: 2008-07-14
  • 公开(公告)号: US07872312B2
    公开(公告)日: 2011-01-18
  • 发明人: Hisashi Ogawa
  • 申请人: Hisashi Ogawa
  • 申请人地址: JP Osaka
  • 专利权人: Panasonic Corporation
  • 当前专利权人: Panasonic Corporation
  • 当前专利权人地址: JP Osaka
  • 代理机构: McDermott Will & Emery LLP
  • 优先权: JP2007-209343 20070810
  • 主分类号: H01L29/76
  • IPC分类号: H01L29/76
Semiconductor device comprising a high dielectric constant insulating film including nitrogen
摘要:
A semiconductor device includes a first gate electrode formed in a first region on a semiconductor substrate with a first gate insulating film sandwiched therebetween; and a second gate electrode formed in a second region on the semiconductor substrate with a second gate insulating film sandwiched therebetween. The first gate insulating film includes a first high dielectric constant insulating film with a first nitrogen concentration and the second gate insulating film includes a second high dielectric constant insulating film with a second nitrogen concentration higher than the first nitrogen concentration.
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