发明授权
- 专利标题: Nonvolatile analog memory
- 专利标题(中): 非易失性模拟存储器
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申请号: US12758760申请日: 2010-04-12
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公开(公告)号: US07872913B2公开(公告)日: 2011-01-18
- 发明人: Cheng-Da Huang , Chih-Cheng Lu , Hsin Chen
- 申请人: Cheng-Da Huang , Chih-Cheng Lu , Hsin Chen
- 申请人地址: TW Hsinchu
- 专利权人: National Tsing Hua University
- 当前专利权人: National Tsing Hua University
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A nonvolatile analog memory has a floating gate point. The nonvolatile analog memory includes a capacitor, a first current source, a second current source and a current adjuster. The first current source controlled by a voltage value at the floating gate point and generates a first current. The second current source controlled by the voltage value at the floating gate point and generates a second current. The current adjuster receives the output voltage and a reference voltage and adjusts the first current and the second current based on the output voltage and the reference voltage. The current adjuster charges or discharges the capacitor to equalize the output voltage to the reference voltage.
公开/授权文献
- US20100188899A1 NONVOLATILE ANALOG MEMORY 公开/授权日:2010-07-29
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