Invention Grant
US07875199B2 Radical generating method, etching method and apparatus for use in these methods
失效
自由基产生方法，蚀刻方法和用于这些方法的装置
- Patent Title: Radical generating method, etching method and apparatus for use in these methods
- Patent Title (中): 自由基产生方法，蚀刻方法和用于这些方法的装置
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Application No.: US10578835Application Date: 2004-11-09
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Publication No.: US07875199B2Publication Date: 2011-01-25
- Inventor: Toshio Goto , Masaru Hori , Mikio Nagai
- Applicant: Toshio Goto , Masaru Hori , Mikio Nagai
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2003-381583 20031111
- International Application: PCT/JP2004/016920 WO 20041109
- International Announcement: WO2005/045915 WO 20050519
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23F1/00
Abstract:
The method for generating radicals comprises: feeding F2 gas or a mixed gas of F2 gas and an inert gas into a chamber of which the inside is provided with a carbon material, supplying a carbon atom from the carbon material by applying a target bias voltage to the carbon material, and thereby generating high density radicals, wherein the ratio of CF3 radical, CF2 radical and CF radical is arbitrarily regulated by controlling the target bias voltage applied to the carbon material while measuring the infrared absorption spectrum of radicals generated inside the chamber.
Public/Granted literature
- US20070131651A1 Radical generating method, etching method and apparatus for use in these methods Public/Granted day:2007-06-14
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